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| BBY 58-02W Silicon Tuning Diode Preliminary data * Excellent linearity * High Q hyperabrupt tuning diode * Low series inductance * Designed for low tuning voltage operation for VCO's in mobile communications equipment * For low frequency control elements such as TCXOs and VCXOs * Very low capacitance spread 2 1 VES05991 Type BBY 58-02W Marking 8 Ordering Code Q62702-B916 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 10 20 -55 ...+150 -55 ...+150 Unit V mA C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-30-1998 1998-11-01 BBY 58-02W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 1 100 nA Unit IR IR - VR = 8 V Reverse current VR = 8 V, TA = 65 C AC characteristics Diode capacitance CT 17.5 5.5 18.3 12.35 8.6 6 2.15 3.05 0.25 0.09 0.6 19.3 6.6 3.3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance pF nH VR = 1 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-30-1998 1998-11-01 BBY 58-02W Diode capacitance CT = f (V R) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) 10 -2 32 pF 1/C CT 24 T Cc 20 10 -3 16 12 8 4 10 -4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 V 5.0 VR VR Normalized diode capacitance C(TA) / C(25C)= f (T A) f = 1MHz, VR = Parameter 1.04 - CTA 1.02 /C 25C 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -30 1V 4V -10 10 30 50 70 C 100 TA Semiconductor Group Semiconductor Group 33 Jul-30-1998 1998-11-01 |
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